عنوان البحث(Papers / Research Title)
GaAs تأثير درجات الحرارة الواطئة على خصائص تيار فولتية لنبائط شوتكي
الناشر \ المحرر \ الكاتب (Author / Editor / Publisher)
براق يحيى كاظم السعدي
Citation Information
براق,يحيى,كاظم,السعدي ,GaAs تأثير درجات الحرارة الواطئة على خصائص تيار فولتية لنبائط شوتكي , Time 1/10/2012 1:25:07 PM : كلية العلوم
وصف الابستركت (Abstract)
بحث مشار في المؤتمر التخصصي الأول للفيزياء في كلية التربية -أبن حيان- جامعة بابل
الوصف الكامل (Full Abstract)
Abstract :
Schottky devices had been prepared in our search by choosing the n-type GaAs as a semiconductor substrate with resistivity (2x10-6 Ohm.cm) and electron affinity (4.07 eV) and we choose two type of metal ( Al , Au) , the Schottky devices we prepared are {Al/GaAs with Al Ohmic contact} , { Al/GaAs with (Ge-Au) alloy with rate (0.12-0.88) as Ohmic contact } and { Au/GaAs with (Ge-Au) alloy with the same rate as Ohmic contact }, first we made the Ohmic contact then we made the Schottky contact by vacuum system evaporation under pressure ( 10 -5 Torr) and the film thickness was ( 100 A?) then we annealed the samples under (673 K) for 30 min. after that we measured the I-V characteristics under forward and reveres bias then we found the saturation current for the samples , Schottky barrier heights , ideality factor at room and low temperatures by using Cryostat System which contain liquid N2 under pressure ( 10 -5 Torr) then we study the temperature effect on these parameters and the Ohmic contact effect.
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