عنوان البحث(Papers / Research Title)
Preparation Schottky devices (Al/Au-GaAs) and study some optoelectronic properties
الناشر \ المحرر \ الكاتب (Author / Editor / Publisher)
براق يحيى كاظم السعدي
Citation Information
براق,يحيى,كاظم,السعدي ,Preparation Schottky devices (Al/Au-GaAs) and study some optoelectronic properties , Time 1/10/2012 2:22:12 PM : كلية العلوم
وصف الابستركت (Abstract)
مشارك في المؤتمر التخصصي الاول للفيزياء / كلية التربية/ابن حيان/امعة بابل
الوصف الكامل (Full Abstract)
Abstract:
Schottky devices had been prepared in our search by choosing the n-type GaAs as asemiconductor substrate with resistivity (2x10-6 Ohm.cm) and electron affinity (4.07 eV) and we choose two type of metal ( Al , Au) , the Schottky devices we prepared are {Al/GaAs with Al Ohmic contact} , { Al/GaAs with (Ge-Au) alloy with ratio(0.12-0.88) as Ohmic contact } and { Au/GaAs with (Ge-Au) alloy with the same ratio as Ohmic contact},first we made the Ohmic contact then we made the Schottky contact by vacuum system evaporation under pressure (10 -5 Torr), the film thickness was (100 A?) then we annealed the samples under (673 K) for 30 min. after that we measured the photocurrent and found the optoelectronic properties such as responsitivity , detectivity , specific detectivity, noise equivalent power and quantum efficiency and we found that the detectors under search work within the near infrared region cause the maximum response and quantum efficiency was in the wavelength(700 nm).
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