Hybrid bilayer heterojunction (DLC) thin-film P-type as an active donor layer and (Si)
thin-film n-type as an acceptor with (Electron Transport Layer ), were fabricated using Qswitching
Nd-YAG Pulsed Laser Deposition (PLD) method under vacuum condition 10-3
torr on two electrodes for (AL) Aluminum material is used to construct the hydride
bilayer heterojunction photovoltaic solar cell (PVSC). The electrical properties of hybrid
heterojunction Al / DLC / SI / AL thin film were studied. The result showed the voltage of
open circuit (Vm=0.145V ), a short circuit (Jm=9.3mA/cm2), and the fill factor (FF) of
(0.4709), with Xenon lamp with an intensity (235mw/cm2), the conversion efficiency
(?=3.54%) at thickness(75nm). While the theoretical calculations and optimization of the
HETEROJUNCTION confirmed the possibility of using it as a successful solar cell, the
calculation of the small energy gap and thus the high electrical conductivity, and the
determination of the type of charge carriers(p), as well as some electronic properties such
as electrostatic potential surfaces and 3-D electron density, hardness, softness and
electrophilicity, were clarified.