عنوان البحث(Papers / Research Title)
Preparation and Study I-V properties for Schottky Devices (Al-GaAs & Ni-GaAs) at forward bias
الناشر \ المحرر \ الكاتب (Author / Editor / Publisher)
براق يحيى كاظم السعدي
Citation Information
براق,يحيى,كاظم,السعدي ,Preparation and Study I-V properties for Schottky Devices (Al-GaAs & Ni-GaAs) at forward bias , Time 1/10/2012 1:18:51 PM : كلية العلوم
وصف الابستركت (Abstract)
منشور في مجلة جامعة بابل
الوصف الكامل (Full Abstract)
Abstract
Four samples had been prepared by using two different metals (Al) with work function (4.13eV) and (Ni) with work function (5.01eV) as (Schottky contact) on (GaAs) semiconductor ( n-Type) , first we made the Ohmic contact for the samples by using (Al) with two samples and (Ni) with the others after that we annealed the samples under a vacuum pressure of the order (10 -4 Torr )and (450 K) for 30 min. in order to get a good contact resistance , then we made the Schottky contact with two samples (Al) and other two for (Ni) and (120 ?) thickness and we annealed the samples under (450 K ) and (10 -4 Torr) to avoid the interfacial layers ,the samples are:{Al-GaAs ( Al Ohmic ) / Al-GaAs (Ni Ohmic ) / Ni-GaAs (Al Ohmic ) / Ni-GaAs (Ni Ohmic ).} Then the I-V characteristics had been measured for the samples and then the saturation current and the barrier height of Schottky contact and the ideality factor is found for the Schottky contact and the specific contact resistance for Ohmic contact is calculated , and then we study the work function and the interfacial layer effect on I-V characteristics .
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