عنوان البحث(Papers / Research Title)
Preparation of Schottky devices (Al-GaAs &Ni-GaAs) and study of some photoelectronic properties
الناشر \ المحرر \ الكاتب (Author / Editor / Publisher)
براق يحيى كاظم السعدي
Citation Information
براق,يحيى,كاظم,السعدي ,Preparation of Schottky devices (Al-GaAs &Ni-GaAs) and study of some photoelectronic properties , Time 1/10/2012 1:19:56 PM : كلية العلوم
وصف الابستركت (Abstract)
منشور في مجلة جامعة بابل
الوصف الكامل (Full Abstract)
Abstract
F our samples of metal (n-type) semiconductor contact had been prepared as a form of Schottky contact where we used (Al & Ni) metals and semiconductor substrate GaAs (donor).The Ohmic contact has been firstly made with thickness (5000 ?) using aluminum for two samples and nickel for other two, four samples were collected, then these samples were annealed under the temperature of (450 K) and pressure (10-4 Torr) for (30 min.) to avoid interfacial layers. Then we made a Schottky contact using aluminum twice and nickel twice with (120 ?) thickness and then we annealed the samples under temperature (450 K) and pressure (10-4 Torr) , the samples are as follows:(Al-GaAs - Al Ohmic / Al-GaAs - Ni Ohmic / Ni-GaAs - Al Ohmic / Ni-GaAs - Ni Ohmic).Then we calculated the values of the photocurrent as a function of wavelength and we found that the maximum value was for the sample (Al-GaAs-Al ohmic) in the wavelength (800 nm) and the dark current is (1.9 x 10 -9 Ampere) then we calculate the Detector coefficients of the samples, the maximum Response was in the wavelength (800 nm) is (0.157 Ampere/ Watt) and maximum Specific Detectivity in the same wavelength is ( 63.7 x10 11 Hz ½ Watt -1), the maximum Noise Equivalent Power is (0.157 Watt Hz -½ ) and the maximum Efficiency is (24.4 %) in the same wavelength , the photocurrent and Response values depended on the absorption coefficients of metals and work functions the samples operate within the area under the nearinfrared.
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