A tunnel diode or Esaki diode is a type of semiconductor diode which is capable of very fast operation, well into the microwave frequency region, by using quantum mechanical effect called tunneling.
It was invented in August 1957 by Leo Esaki when he was with Tokyo Tsushin Kogyo, now known as Sony. In 1973 he received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes. Robert Noyce independently came up with the idea of a tunnel diode while working for William Shockley, but was discouraged from pursuing it.[1] These diodes have a heavily doped p–n junction only some 10 nm (100 ?) wide. The heavy doping results in a broken bandgap, where conduction band electron states on the n-side are more or less aligned with valence band hole states on the p-side. Tunnel diodes were manufactured by Sony for the first time in 1957[2] followed by General Electric and other companies from about 1960, and are still made in low volume today.[3] Tunnel diodes are usually made from germanium, but can also be made in gallium arsenide and silicon materials. They can be used as oscillators, amplifiers, frequency converters and detectors.[4]